[2] M. PICHOT and the IPS department;
Microwave Multipolar Plasma etching at low pressure : a novel reactor concept,
Microelectronic Engineering, 3, 1985, pp 411-418

[3] B. Petit, A. Durandet and J. Pelletier;
Etching of SiO2 in SF6 plasma: the role of ions and electrons in etching mechanisms,
Vacuum, 36(11, 12), 1986, pp 799-802

[4] J. Pelletier, Y. Arnal and A. Durandet;
SF6 plasma etching of silicon : evidence of sequential multilayer fluorine adsorption,
Europhys. Lett., 4 (9), 1987, pp 1049-1054

[5] M. Pichot, A. Durandet, J. Pelletier, Y. Arnal and L. Vallier; Microwave multipolar plasma excited by distributed electron cyclotron resonance : concept and performances,
Rev. Sci. Instrum. 59 (7),1988, pp1072-1075

[6] A. Durandet;
RCE 160 : un nouveau concept de réacteur de gravure en microélectronique,
Toute l'électronique Equipements, Nov. 1988

[7] A. Durandet;
Distributed Electron Cyclotron Resonance : multipolar for uniform anisotropic etching,
European Semiconductor, March 1989, 23-27

[8] A. Durandet;
DECR, a viable concept for integrated circuits etching,
Microelectronic Manufacturing and Testing, 12(6), 1989, pp 26-28

[9] A. Durandet, Y. Arnal, J. Margot-Chaker and M. Moisan;
Investigation of a plasma source sustained by an electromagnetic surface wave at 2.45 GHz under free fall regime,
J. Phys. D : Appl. Phys. (22), 1989, pp1288-1299

[10] A. Durandet, Y. Arnal, J. Pelletier and C. Pomot;
Anisotropy and kinetics of the etching of tungsten in SF6 multipolar microwave plasma,
J. Appl. Phys 67(5), 1990, pp 2298-2302

[11] A. Durandet, O. Joubert, J. Pelletier and M. Pichot;
Effect of ion bombardment and chemical reaction on wafer temperature during plasma etching,
J. Appl. Phys. 67(8), 1990, pp 3862-3866

[12] G. Giroult-Matlakowski, S. Armand, H. Persing, R. Boswell, P.
Loyd, S. Hyde, A. Perry, A. Durandet, C. Charles and D. Bogsanyi; Deposition of silicon dioxide films using the helicon diffusion reactor for integrated optics applications,
J. Vac. Sci. Technol. A 12(5), 1994, pp 2754-2761

[13] B. Higgins, A. Durandet and R. Boswell;
An investigation of silicon transport in the neutral background of a plasma activated reactive evaporation,
J. Vac. Sci. Technol B 13(2), 1995, pp 192-197

[14] A. Durandet, R. Boswell and D. McKenzie;
A new plasma-assisted deposition technique using helicon activated reactive evaporation,

Rev. Sci Instrum. 66 (3), 1995, pp 2908-2913
[15] D. R. McKenzie, W. D. McFall, H. Smith, B. Higgins, R. W.
Boswell, A. Durandet, B. W. James and I. S. Falconer;
High pressure phases produced by low energy ion implantation with
reference to cubic boron nitride,
Nuclear Instruments and Methods in Physics Research B 106, 1995, pp 90-95

[16] D. R. McKenzie, W. D. McFall, S. Reisch, B. W. James, I. S.
Falconer, R. W. Boswell, H. Persing, A. J. Perry and A. Durandet;
Synthesis of Cubic Boron Nitride thin film,
Surface and Coatings Technology 78, 1996, pp 255-262

[17] R. A. Jarvis, J. D. Love, A. Durandet, G. D. Conway and R. W. Boswell;
UV-induced index change in hydrogen-free germano-silicate waveguides,
Electronics Letters 32(5), 1996, (in press)

[18] A. Durandet, A. Perry, R. Boswell, F. Ladouceur, J. Love, M. Faith, P. Kemeny, X. Ma, M. Austin;
Silica buried channel waveguides fabricated at low temperature using PECVD,
Electronics Letters 32(4), 1996, pp326-327

[19] D. R. Beltrami, J. D. Love, A. Durandet, A. Samoc, M. Samoc, B.
Luther-Davies and R. Boswell;
A planar graded-index (GRIN) PECVD lens,
Electronics letters 32(6), 1996 (in press)

[20] D.R.McKenzie, W. D. McFall, W. G. Sainty, Y. Yin and A. Durandet;
New technologies for PACVD,
Thin solid films, 1996, (in press)

[21] A. Durandet and D. McKenzie;
A study of the effect of the energy of ion bombardment on the optical and structural properties of PECVD SiO2,
Submitted to J. Appl. Phys., 1996

[22] A. Durandet and D. McKenzie
Pure silicon plasma in the Helicon plasma deposition system
Accepted by Applied Physics Letters