Yang, Si Ze

Plasma Processing Research of Pulsed High Energy Density Plasma, PSII, and ECR Plasma

Si-Ze Yang

Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
yangsz@mimi.cnc.ac.cn

A review of plasma processing research in our laboratory will be given. There are three different devices for plasma processing, which are: Pulsed High Energy Density Plasma (PHEDP), Plasma Source Ion Implantation (PSII), and Electron Cyclotron Resonance (ECR) Plasma, and which were built on the basis of equipment originally used for controlled fusion research. An introduction of the functioning of each device will be described.

The parameters of the plasma generated by PHEDP are :

n (plasma density) = 10 to sixteenth cm-3, T (temperature) = 10-100 eV
v (velocity) = 10-100 km/s, t (pulse width) = 10-100 microseconds

Due to the very high energy density and short pulse width of the plasma, the PHEDP interacting on the surface of material will rapidly heat up the surface. The surface temperature will be increased and cooled down drastically. The quenching rate can be as high as 108 E/s. Therefore, the crystalline of the films generated is of order of nanoscale. And the films produced with the PHEDP have very good adhesion with the substrate. By use of PHEDP, titanium nitride (TiN), diamond-like-carbon (DLC), cubic boron nitride (c-BN), and aluminum nitride (AlN) films on steel and single crystal silicon substrates have been produced.

An innovate method to have the inner surface of tubular material modified by use of PSII will be introduced. The experimental and theoretical results of the propagation of the sheath of applied high voltage pulse will be given. The experiment of inner surface modification of tube will be shown.

ECR plasma device and DLC films produced in ECR plasma will be described.