Kungen Teii, Masaru Miyahara*, Shigeru Ono* and Shinriki Teii*

Department of Metallurgy and Materials Science
Faculty of Engineering, The University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan

*Department of Electrical and Electronic Engineering
Musashi Institute of Technology
1-28-1 Tamazutsumi, Setagaya-ku, Tokyo, Japan
ono@ee.musashi-tech.ac.jp

In our previous work, we have reported that boron nitride thin film can be prepared by using the reduced pressure (5 to 40 Torr) nitrogen plasma torch. Formation of both the c-BN and h-BN has been considered by using the XPS and FT-IR absorption method.

In the present work, another method of reflective high energy electron diffraction (RHEED) has been used to confirm the existence of c-BN and h-BN in the films. Experimental results show that the diffraction pattern for c-BN can be observed for all films obtained in contrast to that the FT-IR absorption peak for c-BN can be observed only for those prepared at the position close to the nozzle. This discrepancy may be explained by the difference of film thickness. Data will be presented and discussed.