INVESTIGATION OF DIAMOND SYNTHESIS BY DC PLASMA JET, RF INDUCTION THERMAL PLASMA, AND COMBUSTION FLAME AT ATMOSPHERIC PRESSURE

Dong-Wha Park

Department of Chemical Engineering, Inha University
253 Yonghyundong, Namgu, Inchon, 402-751, Korea
dwpark@munhak.inha.ac.kr


Diamond was synthesized by DC plasma jet, inductively coupled thermal plasma, and combustion flame at atmospheric pressure. In case of using DC plasma jet, the diamond film, which was deposited at the substrate temperature of 970 C and the methane to hydrogen flow ratio of 4 %, had a good crystallinity. The thickness of deposited diamond is almost 0.1mm for the deposition time of 30 min.

Diamond was also synthesized by RF induction thermal plasma using a liquid organic compounds. In case of using isopropyl alcohol as a liquid precursor, diamond of advanced crystallinity was synthsized when the substrate temperature was 1050 C and the flow ratio of isopropyl alcohol to hydrogen was 2.5 %. As the temperature of the substrate increased, the growth of diamond crystal facet was converted from (100) to (111) and more dense.

In case of using combustion flame torch, the diamond film of good crystallinity and high density was deposited when flow ratio of C2H2/O2, flow ratio of H2/O2 and substrate temperature were 1.0, 0.5, and 900 C, respectively.