Ken-ichi Itoh and Osamu Matsumoto*

Department of Chemistry, Aoyama Gakuin University
Chitosedai, Setagaya-ku, Tokyo 157-8572, Japan
matumoto@candy.chem.aoyama.ac.jp

A deposition of some mixed metal oxides thin films was carried out by means of plasma CVD with volatile b-diketonates as precursors. Yttria stabilized zirconia thin film was deposited by the addition of zirconium acetylacetonate and yttrium dipivalotlmethanate into the oxygen microwave plasma [1]. Moreover, BaTiO3 and SrTiO3 thin films were prepared by the addition of barium and strontium dipivalotlmethanates with titanium tetraisopropoxide into the oxygen microwave plasma [2, 3]. Thin films which showed a high transmittance and a wide band gap and had good electric properties, electric conductivity and dielectric constant, were obtained.

During the thin film deposition process, the dissociation of b-diketonates to respective constituents was identified in the plasmas by means of optical emission spectroscopy. Otherwise, the formation of titanium dioxide molecules in the plasma was supported by means of optical emission spectroscopy and quadrupole mass spectroscopy. In every case, a higher deposition rate was obtained as compared with that in the thermal CVD using the same precursors, because the species prepared in the plasma would be the intermediates of the deposition procedure. The intermediate species prepared in the plasma deposited on the substrate and crystallized on the substrate surface.

References

[1] H. Uyama, N. Oka, I. Ono, and O. Matsumoto, Denki Kagaku, 58 (1990) 564.
[2] T. Chiba, K. Itoh, and O. Matsumoto, Thin Solid Films, 300 (1997) 6.
[3] K. Itoh, M. Okunishi, E. Fujimoto, and O. Matsumoto, Proceedings of ISPC-13, p.1177 (1997).