H. Kuwahara

Nissin Electric Co. Ltd., 47 Umezu-Takase Cho, Ukyo-ku, Kyoto 615-8686, JAPAN
kuwabara@rd.nissin.co.jp

We have been studying pulsed rf p-CVD for various applications including a-Si, TiN and DLC[1-2]. The pulsed transient discharge can be used to create non-thermal high energy electron. And the short duration of the pulsed plasma, if the life time of radicals in plasma is shorter than this, may eliminate unwanted radicals. We will propose some practical operation regime using double pulsed rf p-CVD to deposit the high quality a-Si film.

Furthermore we will present initial results of a pulsed rf plasma with a synchronized pulsed bias. The purpose of this system is to implant nitrogen, to crystallize deposited film and to reduce substrate temperature. The repetition rate for pulsing and the pulse bias voltage are 200Hz to 1 kHz and up to 6 kV respectively. The results will be shown in the meeting.

[1] H. Kirimura et al; Jpn. J. Appl. Phys. Vol. 33 (1994)
[2] T. Nakahigashi et al; Jpn. J. Appl. Phys. Vol. 36 (1997)