Li Gou, Chandsong Qi, Junguo Ran and Changqiong Zheng

Sichuan Union University, Chengdu, 610065 China
nic0700@pridns.scuu.edu.cn

SiC has been usually used as abrasive and heat-resistant materials. In the 1980s, its application in electronics was found as thermistor materials. The researchers have recognized its importance of electronic materials since the 1990s. SiC exhibits its outstanding advantages in high-voltage high-frequency, wide forbidden band and good radiation resistance.

In the application of SiC as a function material, SiC film is one of the main forms because of simple preparation and processing and low costs. At present general methods of growing SiC film are RF sputtering and CVD. But the shortage of high substrate temperature (1000 C or so) in CVD method and difficult large-scale production in RF-sputtering limited the further application of SiC film. SiC film prepared by plane magnetron sputtering was studied in the present paper. How the conditions such as gas pressure, sputtering power, sputtering time and distance between target and substrate affected the deposition rate, hardness, resistivity and density of film were investigate. Amorphous SiC film was grown at substrate temperature 100 C using polycrystalline SiC target.