The Helicon Activated Reactive Evaporation system developped at the ANU combines an
evaporation source (e-beam) and a high density plasma source (helicon source) in
a configuration where the evaporant passes through the plasma source. This system
has been used for the deposition of silicon dioxide, achieved by evaporating silicon in an
oxygen plasma. Recently, the system has been up-graded with a powerful electron-beam
evaporator that allows higher evaporation rates of materials, as well as the co-evaporation of three different materials simultaneously. Utilising the versatility of the HARE,
we have investigated various applications such as: pure metal plasma, deposition
of silicon nitride and silicon oxide, photosensitive doped silicon oxide for integrated
optics.