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Citation 34

Accession Number: 005008951
Author: Cai YQ. Vos M. Storer P. Kheifets AS. McCarthy IE. Weigold E.
Institution: Electron. Structure of Mater. Centre, Flinders Univ. of South Australia,
Adelaide, SA, Australia.
Title: Direct imaging of the valence electronic structure of solids by (e,2e)
spectroscopy.
Source: Solid State Communications, vol.95, no.1, July 1995, pp.25-9. USA.
Country of Publication: USA.
Abstract: The spectral momentum density rho (E,q) of the valence electrons of solid thin films of annealed amorphous carbon, amorphous silicon and silicon carbide has been measured using (e,2e) spectroscopy. Substantial contrast has been observed between the images of the three momentum densities, which show not only well-defined energy band dispersion in the three materials, but also the antisymmetric gap due to the unequal potentials between the Si and C sites in the silicon carbide. The relation between the three momentum densities is explained within the framework of the one-electron band theory of solids. (15 References).
Abstract Number: A9516-7320-027
Subject Headings: Amorphous semiconductors
Carbon
Electron spectra
Elemental semiconductors
Semiconductor materials
Semiconductor thin films
Silicon
Silicon compounds
Surface states
Valence bands
Key Phrase Identifiers: valence electronic structure; (e,2e) spectroscopy; spectral momentum density;
solid thin films; well-defined energy band dispersion; antisymmetric gap;
one-electron band theory; a-C; a-Si; a-SiC; semiconductor; C; Si; SiC.
Classification Codes: Surface states, band structure, electron density of states [A7320A]; Electron
energy states in amorphous and glassy solids [A7125M].
Treatment: Experimental.
Chemicals: C/el; Si/el; SiC/bin; Si/bin; C/bin.
CODEN: SSCOA4
Language: English.
ISSN: 0038-1098.
U.S. Copyright Clearance Center Code: 0038-1098/95/$9.50+.00.
Publication Type: Journal Paper.
Update Code: 199500.